How to add GIF in your Readme Of Github

Building a Good Github is always helpful and it help you to show your work to the world. Adding GIF to the Github readme is always clear and shortcut way to show how your project work and how it look like. In this tutorial i am gonna show you how to make GIF and add this to your github Readme. If you are wonder What it will look like just check the link below:
https://github.com/silentashish/IntroPage-CSS/tree/master

Step 1 : Recording Your project's Screen

Very first step is to create a short video which open all the feature of your project. You can use any ScreenRecorder software we want like Camstudio, Camtasia, Fraps etc. If you are a windows user then there is by default screen recorder in your Operating system provided by Xbox which is basically developed for gamer to record their gaming screen. To use this you must have to enable Xbox in your setting.

Go to the setting of your window and click on Gaming

Enable ( Record game clips, screenshots and broadcast using game bar ) option

There you go , now you are ready to go.
You can now open Screen recorder in every app like you can record in chrome ,or in atom text editor.

Just press Win + G to open Game bar. This will look like this

Now  you can start recording or you can use shortcut WIN + ALT + R

Step 2 : Downloading and Installing Flimora 

Get Flimora from the link Given Below
https://filmora.wondershare.com/video-editor/ 

 Open Flimora in Full Feature Mode.

Clicking on "Import" import your video into the Flimora and drag it into the Video Section.

I recommend to increase video playback speed. You can do it by right clicking on video Edit and increase speed.

Then export your video into the GIF. You successfully created GIF now.

Step 3: Push your GIF into the github ripo and get link
Now it's the time to push your video into the github and copy the link of the GIF.

Step 4 : Update your readme now 
Now in you read me write as

![alt-text](link)
 
example below: ![grab-landing-page](https://github.com/silentashish/mypro/photo.gif)

Function vs Method

A function is a piece of code that is called by name. It can be passed data to operate on (i.e. the parameters) and can optionally return data (the return value). All data that is passed to a function is explicitly passed.
A method is a piece of code that is called by a name that is associated with an object. In most respects it is identical to a function except for two key differences:

1. A method is implicitly passed the object on which it was called.
2. A method is able to operate on data that is contained within the class (remembering that an object is an instance of a class - the class is the definition, the object is an instance of that data).

Team advances GaN-on-Silicon for scalable high electron mobility transistors

A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. Working with industry partners Veeco and IBM, the team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes.

a) Cross sectional structure. b) TEM image of top 80 nm of the HEMT structure. The dark gray layer marks the start of the surface. c) STEM image of top 80 nm. The surface starts beneath the black layer and the dark band in the image is the …more

Read more at: http://phys.org/news/2017-01-team-advances-gan-on-silicon-scalable-high.html#jCp

Can Bayram, an assistant professor of electrical and computer engineering (ECE), and his team have created the GaN HEMT structure on a silicon platform because it is compatible with existing CMOS manufacturing processes and is less expensive than other substrate options like sapphire and silicon carbide.

However, silicon does have its challenges. Namely, the lattice constant, or space between silicon atoms, doesn't match up with the atomic structure of the GaN grown on top of it.

"When you grow the GaN on top, there's a lot of strain between the layers, so we grew buffer layers [between the silicon and GaN] to help change the lattice constant into the proper size," explained ECE undergraduate researcher Josh Perozek, lead author of the group's paper, "Investigation of structural, optical, and electrical characteristics of an AlGaN/GaN high electron mobility transistor structure across a 200mm Si(1 1 1) substrate," in the Journal of Physics D: Applied Physics.

Without these buffer layers, cracks or other defects will form in the GaN material, which would prevent the transistor from operating properly. Specifically, these defects—threading dislocations or holes where atoms should be—ruin the properties of the 2-dimensional electron gas channel in the device. This channel is critical to the HEMTs ability to conduct current and function at high frequencies.

"The single most important thing for these GaN [HEMT] devices is to have high 2D electron gas concentration," said Bayram, about the accumulation of electrons in a channel at the interface between the silicon and the various GaN-based layers above it.

"The problem is you have to control the strain balance among all those layers—from substrate all the way up to the channel—so as to maximize the density of the of the conducting electrons in order to get the fastest transistor with the highest possible power density."

After studying three different buffer layer configurations, Bayram's team discovered that thicker buffer layers made of graded AlGaN reduce threading dislocation, and stacking those layers reduces stress. With this type of configuration, the team achieved an electron mobility of 1,800 cm2/V-sec.

"The less strain there is on the GaN layer, the higher the mobility will be, which ultimately corresponds to higher transistor operating frequencies," said Hsuan-Ping Lee, an ECE graduate student researcher leading the scaling of these devices for 5G applications.

According to Bayram, the next step for his team is to fabricate fully functional high-frequency GaN HEMTs on a silicon platform for use in the 5G wireless data networks.

When it's fully deployed, the 5G network will enable faster data rates for the world's 8 billion mobile phones, and will provide better connectivity and performance for Internet of Things (IoT) devices and driverless cars.